Description
Advanced Energy APEX3013 3156114-746
Technical Specifications Rated RF output power 3000W; working frequency matched with APEX3013 series design; AC mains input; built-in power regulation and reflection power detection circuit; integrated digital communication interface; operating ambient temperature 10°C to +40°C; internal forced air cooling; protection against over-temperature, over-current and high reflected power.
Functional Features Generate and regulate high-power radio frequency output for vacuum plasma processes. Detect reflected power from the load in real time and trigger power reduction or shutdown protection when reflection exceeds threshold. Receive power setpoint and operation commands from host equipment controller through digital communication. Upload output power, reflected power and internal temperature status to upper control system. Execute self-protection action under over-temperature, over-current and load mismatch conditions. Support parameter configuration and status reading via dedicated control software.
Application Scenarios Semiconductor wafer etching process, PVD and CVD thin film deposition, flat panel display plasma processing, vacuum surface modification equipment.
Performance Parameters High precision RF power regulation; fast response to load impedance change; low power fluctuation during continuous plasma processing; reliable reflection power protection for abnormal plasma state.
Material Composition Internal power circuit board uses high-current FR-4 substrate; RF power transistors are high-frequency power semiconductors; resonant components use high-frequency ceramic and copper parts; chassis is welded aluminum alloy for electromagnetic shielding and heat dissipation; internal cooling fan adopts high-temperature resistant bearing structure.
Structural Characteristics Integrated chassis cabinet structure with built-in cooling air duct. Rear panel equipped with AC input terminal, RF output coaxial connector and communication interface. Front panel carries power switch and status indicator lamps. Internal layout divides power circuit, control circuit and RF output circuit into independent areas.
Working Principle The control circuit receives power setpoint from the host controller, drives the RF power amplification circuit to generate radio frequency energy, and transmits RF power to the plasma chamber through the coaxial output port. The built-in power sensor samples forward and reflected power, feeds back to the regulation circuit to stabilize output power. When reflected power, temperature or current exceeds the preset limit, the protection circuit cuts off RF output immediately.
Installation Requirements Install the unit in a well-ventilated equipment cabinet. Connect specified AC mains power to the input terminals. Use high-power matched coaxial cable to connect RF output port to the process chamber matching network. Wire the digital communication cable to the equipment host controller. Complete power calibration and load matching test before plasma process trial run.
Precautions for Use Do not operate the unit without qualified RF load connected. Keep air inlet and outlet of cooling channel free of blockage. Only professional engineers are allowed to open the chassis. Disconnect mains power and wait for capacitor discharge before internal maintenance.
